SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 SEPTEMBER 95
7
BSS64
C
B
E
COMPLIMENTARY TYPE -
PARTMARKING DETAIL -
BSS63
BSS64 - U3
BSS64R - U6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
TOT
t
j
:t
stg
VALUE
120
80
5
100
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation
Voltage
Static Forward Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
MIN.
120
80
5
100
50
200
150
200
1.2
Typ.
60
80
55
Typ.
100
MHz
MAX.
UNIT
V
V
V
nA
CONDITIONS.
I
C
=100
µ
A
I
C
=4mA
I
E
=100
µ
A
V
CB
=90V
V
CB
=90V,T
j
=150
o
C
V
EB
=5V
I
C
=4mA, I
B
=400
µ
A
I
C
=50mA, I
B
=15mA
I
C
=4mA, I
B
=400
µ
A
I
C
=1mA, V
CE
=-1V
I
C
=10mA, V
CE
=1V
I
C
=20mA, V
CE
=1V
V
CE
=10V, I
C
=4mA
f=35 MHz
V
CB
=10V, f=1MHz
µ
A
nA
mV
mV
mV
20
Transition Frequency
f
T
60
Typ.
3
Output Capacitance
C
obo
5
pF
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
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