SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 2 SEPTEMBER 95
PARTMARKING DETAILS -
7
BSS79B - CE
BSS79C - CF
BSS79B
BSS79C
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
P
TOT
t
j
:t
stg
VALUE
75
40
6
800
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
MIN.
75
40
6
10
10
10
0.3
1.0
40
100
250
8
10
10
225
60
120
300
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector Base Cut-Off Current
Emitter Base Cut-Off Current
Collector-Emitter Saturation
Voltage
Static Forward
Current
Transfer Ratio
Transition Frequency
Collector-Base Capacitance
Delay Time
MAX.
UNIT
V
V
V
µ
A
CONDITIONS.
I
C
=10
µ
A
I
C
=10mA
IE=10
µ
A
V
CB
=60V
V
CB
=60V, T
amb
=150
o
C
V
BE
=3.0V
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, V
CE
=10V
I
C
= 150mA, V
CE
=10V
Emitter-Base Breakdown Voltage V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
obo
t
d
t
r
t
s
t
f
nA
nA
V
V
BSS79B
BSS79C
MHz
pF
ns
ns
ns
ns
V
CE
=20V, I
C
=20mA
f=100MHz
V
CB
=10V, f=1MHz
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=I
B2
=15mA
Rise Time
Storage Time
Fall Time
PAGE NUMBER
ZETEX [ ZETEX SEMICONDUCTORS ]
