SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPTEMBER 1995
7
PARTMARKING DETAIL
SP
BSS84
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage Peak
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
BV
DSS
V
GS(th)
I
DSS
MIN.
-50
-0.8
-1.5
-1
-2
-2.0
-15
-60
-100
Gate-Source Leakage
Current
Drain Source On-State
Resistance (1)
Forward
Transconductance (1)
(2)
Input Capacitance (2)
Output Capacitance
Reverse Transfer
Capacitance (2)
SYMBOL
V
DS
I
D
I
DM
V
GS
P
TOT
t
j
:t
stg
TYP.
MAX.
VALUE
-50
-130
-520
±
20
UNIT
V
mA
mA
V
mW
°C
360
-55 to +150
UNIT
V
V
µ
A
µ
A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
Drain-Source
Breakdown Voltage
Gate-Source
Threashold Voltage
Zero gate Voltage
Drain Current
CONDITIONS.
V
GS
=0V, I
D
=0.25mA
V
DS
=V
GS
, I
D
=-1mA
T
j
=25 °C
T
j
=125 °C
V
DS
=-50V, V
GS
=0V(2
)
T =25
°
C
V
DS
=-25V, V
GS
=0V
j
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td(on)
t
r
t
d(off)
t
f
0.05
-1
6
0.07
40
15
6
10
10
18
25
-10
10
nA
Ω
V
GS
=
±
20V
V
DS
=0V
V
GS
=-5V
I
D
=-100mA
V
DS
=-25V
I
D
=-100mA
V
GS
=0V
V
DS
=-25V
f=1MHz
V
DD
=-30V
I
D
=-0.27A
V
GS
=-10V
R
GS
=50
Ω
S
pF
Turn-On Time t
on
Turn-Off Time t
off
ns
* (1) Measured under pulsed conditions. Pulse width = 300
µ
s. Duty cycle 2%
(2) Sample test.
3 - 69
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