SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 – FEBRUARY 1996
FEATURES
* High V
CEO
* Low saturation voltage
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
BST40
BT1
7
BST15
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-200
-200
-4
-1
-500
1
-65 to +150
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
MIN.
-200
-200
-4
-1
-50
-20
- 2.0
-0.5
30
15
15
150
MHz
pF
TYP.
MAX.
UNIT
V
V
V
µA
µA
µA
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-1mA
I
E
=-100µA
V
CB
=-175V
V
CB
=-150V
V
EB
=-4V
I
C
=-50mA, I
B
=-5mA*
I
C
=-30mA, I
B
=-3mA*
I
C
=-50mA, V
CE
=-10V*
I
C
=-10mA, V
CE
=-10V*
f = 30MHz
V
CB
=-10V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
V
CE(sat)
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
For typical characteristics graphs see FMMTA92 datasheet.
3 - 75
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