SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – JUNE 1996
FEATURES
* Fast Switching
* High h
FE
.
COMPLEMENTARY TYPE –
PARTMAKING DETAIL –
7
BST39
C
BST16
AT1
C
B
SOT89
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
400
350
5
1
500
1
-65 to +150
UNIT
V
V
V
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Output Capacitance
Input Capacitance
Transition Frequency
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
CE(sat)
V
BE(sat)
h
FE
C
obo
C
ibo
f
T
70
40
2
20
pF
pF
MHz
MIN.
400
350
5
20
0.5
1.3
MAX.
UNIT
V
V
V
nA
V
V
CONDITIONS.
I
C
=10µA
I
C
=1mA*
I
E
=10µA
V
CB
=300V
I
C
=50mA, I
B
=4mA
I
C
=50mA, I
B
=4mA
I
C
=20mA, V
CE
=10V*
V
CB
=10V, f=1MHz
V
EB
=10V, f=1MHz
I
C
=10mA, V
CE
=10V,
f=5MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
For typical characteristics graphs see FMMT458 datasheet.
3 - 77
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