SOT89 PNP SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – JANUARY 1996
FEATURES
* Fast Switching
* High h
FE
PARTMAKING DETAIL —
627
7
BST62-70
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Pea Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-85
-72
-10
-1.5
-500
-100
1
-65 to +150
UNIT
V
V
V
A
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Emitter Cut-Off Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Turn On Time
Turn Off Time
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
EBO
I
CES
V
CE(sat)
MIN.
-85
-72
-10
-10
-10
-1.3
-1.3
-1.9
1K
2K
400 Typical
1.5K Typical
ns
ns
MAX.
UNIT
V
V
V
µA
µA
V
V
V
CONDITIONS.
I
C
=-10µA, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-10µA, I
C
=0
V
EB
=-8V, I
E
=0
V
CE
=-72V, I
C
=0
I
C
=-500mA, I
B
=-0.5mA
I
C
=-500mA, I
B
=-0.5mA
T
j
=150°C
I
C
=-500mA, I
B
=-0.5mA
I
C
=-150mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-10V*
I
C
=-500mA
I
Bon
=I
Boff
=-0.5mA
V
BE(sat)
h
FE
t
on
t
off
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
For typical characteristics graphs see FZTA63 (SOT223) datasheet.
3 - 82
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