SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
7
FCX593
N93
FCX493
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
MIN.
120
100
5
100
100
100
0.3
0.6
1.15
1.0
100
100
60
20
150
10
MAX.
VALUE
120
100
5
1
2
200
1
-65 to +150
UNIT
V
V
V
A
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
Collector Cut-Off Currents
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100µA
I
C
=10mA*
I
E
=100µA
V
CB
=100V
V
CES
=100V
V
EB
=4V
I
C
=500mA, I
B
=50mA
I
C
=1A, I
B
=100mA
I
C
=1A, I
B
=100mA
I
C
=1A, V
CE
=10V
I
C
=1mA, V
CE
=10V*
I
C
=250mA, V
CE
=10V*
I
C
=500mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
MHz
pF
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
300
Transition Frequency
Collector-Base
Breakdown Voltage
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
For typical Characteristics graphs see FMMT493 datasheet.
3 - 88
ZETEX [ ZETEX SEMICONDUCTORS ]
