SOT89 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
7
FCX593
C
COMPLIMENTARY TO FMMT493
PARTMARKING DETAIL - P93
E
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-120
-100
-5
-2
-1
-200
1
-65 to +150
B
UNIT
V
V
V
A
A
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Cut-Off Currents
I
CBO
I
EBO
I
CES
Saturation Voltages
V
CE(sat)
V
BE(sat)
Base-Emitter Turn-on Voltage
Static Forward Current Transfer Ratio
V
BE(on)
h
FE
100
100
100
50
50
5
-120
-100
-5
-100
-100
-100
-0.2
-0.3
-1.1
-1.0
300
MAX. UNIT CONDITIONS.
V
V
V
nA
nA
nA
V
V
V
V
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-100V
V
EB
=-4V
V
CES
=-100V
I
C
=-250mA,I
B
=-25mA*
I
C
=-500mA I
B
=-50mA*
I
C
=-500mA,I
B
=-50mA*
I
C
=-1mA, V
CE
=-5V*
I
C
=-1mA, V
CE
=-5V
I
C
=-250mA,V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
pF
V
CB
=-10V, f=1MHz
Transition Frequency
Output Capacitance
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
For typical Characteristics graphs see FMMT593 datasheet
3 - 94
ZETEX [ ZETEX SEMICONDUCTORS ]
