FCX605
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
140
120
10
100
10
TYP.
MAX.
UNIT
V
V
V
nA
µA
CONDITIONS.
I
C
=100 A
I
C
=10mA*
I
E
=100 A
V
CB
=10V
V
CB
= 120V
Tamb = 100°C
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
I
EBO
I
CES
V
CE(sat)
0.1
10
1
1.5
V
BE(sat)
V
BE(on)
h
FE
2K
5K
2K
0.5
150
90
15
0.5
1.6
1.8
1.7
µA
µA
V
V
V
V
V
EB
= 8V
V
CES
=120V
I
C
=250mA, I
B
= 0.25mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
= 1mA*
I
C
= 1A, V
CE
= 5V*
I
C
= 50mA, V
CE
= 5V*
I
C
=500mA, V
CE
= 5V*
I
C
=1A, V
CE
= 5V*
I
C
=2A, V
CE
= 5V*
MHz
pF
pF
µs
µs
I
C
=100mA, V
CE
=10V
f=20MHz
V
CB
=500mV, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
100K
Transition Frequency
Input Capacitance
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
ibo
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Nb. Spice parameter data is available upon request for this device.
ISSUE 1 - JULY 2001
3
ZETEX [ ZETEX SEMICONDUCTORS ]
