SOT89 PNP SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 -JULY 2000
FEATURES
FCX790A
C
*
*
*
*
2W POWER DISSIPATION
6A Peak Pulse Current
Excellent H
FE
Characteristics
Low Saturation Voltages
Partmarking Detail -
790A
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current **
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-50
-40
-5
-6
-2
1 †
2 ‡
-55 to +150
UNIT
V
V
V
A
A
W
W
°C
† recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions when soldering surface mount components.
ZETEX [ ZETEX SEMICONDUCTORS ]
