SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* Low equivalent on-resistance;
R
CE(sat)
250mΩ at 1A
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FMMT549
449
FMMT449
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
UNIT
VALUE
50
30
5
2
1
200
500
-55 to +150
CONDITIONS.
UNIT
V
V
V
A
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
MIN. MAX.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
50
30
5
0.1
10
0.1
0.5
1.0
1.25
1.0
70
100
80
40
150
15
300
MHz
pF
V
V
V
µ
A
µ
A
µ
A
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=40V, I
E
=0
V
CB
=40V, T
amb
=100°C
V
EB
=4V, I
C
=0
I
C
=1A, I
B
=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1A, I
B
=100mA*
I
C
=1A, V
CE
=2V*
I
C
=50mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=50mA, V
CE
=10V
f=100mHz
V
CB
=10V, f=1MHz
Emitter-Base Breakdown V
(BR)EBO
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
V
V
V
V
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 106
ZETEX [ ZETEX SEMICONDUCTORS ]
