SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995
FEATURES
* 400 Volt V
CEO
FMMT458
E
C
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FMMT558
B
458
SOT23
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
MIN.
400
400
5
100
100
100
0.2
0.5
0.9
0.9
100
100
15
50
300
MHz
5
135 Typical
2260 Typical
pF
ns
ns
MAX.
VALUE
400
400
5
225
1
200
500
-55 to +150
UNIT
V
V
V
nA
nA
nA
V
V
V
V
UNIT
V
V
V
mA
A
mA
mW
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
SYMBOL
V
(BR)CBO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=320V
V
CE
=320V
V
EB
=4V
I
C
=20mA, I
B
=2mA*
I
C
=50mA, I
B
=6mA*
I
C
=50mA, I
B
=5mA*
I
C
=50mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
I
C
=50mA, V
CC
=100V
I
B1
=5mA, I
B2
=-10mA
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
Transition Frequency
Collector-Base
Breakdown Voltage
Switching times
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 112
ZETEX [ ZETEX SEMICONDUCTORS ]
