SOT23 NPN SILICON PLANAR HIGH VOLTAGE
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 DECEMBER 1995
COMPLIMENTARY TYPE
PARTMARKING DETAIL
7
FMMT597
497
FMMT497
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
100
80
20
75
5
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
MIN.
MAX.
VALUE
300
300
5
500
1
200
500
-55 to +150
UNIT
V
V
V
100
100
100
0.2
0.3
1.0
1.0
300
MHz
pF
nA
nA
nA
V
V
V
V
SOT23
UNIT
V
V
V
mA
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
300
300
5
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=250V
V
CES
=250V
V
EB
=4V
I
C
=100mA, I
B
=10mA
I
C
=250mA, I
B
=25mA
I
C
=250mA, I
B
=25mA
I
C
=250mA, V
CE
=10V
I
C
=1mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
I
C
=250mA, V
CE
=10V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 125
ZETEX [ ZETEX SEMICONDUCTORS ]
