SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 1 – NOVEMBER 1998
FEATURES
*
Excellent h
FE
characterisristics up to I
C
=50mA
*
Low Saturation voltages
FMMT560
C
PARTMARKING DETAIL –
560
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-500
-500
-5
-500
-150
500
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Switching times
SYMBOL
V
(BR)CBO
V
BR(CEO)
V
(BR)EBO
I
CBO
; I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
100
80
15 typ
60
8
110 typ.
1.5 typ.
MIN.
-500
-500
-5
-100
-100
-0.2
-0.5
-0.9
-0.9
300
300
MHz
pF
ns
µs
MAX.
UNIT
V
V
V
nA
nA
V
V
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
CB
=-500V; V
CE
=-500V
V
EB
=-5V
I
C
=-20mA, I
B
=-2mA *
I
C
=-50mA, I
B
=-10mA *
I
C
=-50mA, I
B
=-10mA *
I
C
=-50mA, V
CE
=-10V *
I
C
=-1mA, V
CE
=-10V
I
C
=-50mA, V
CE
=-10V *
I
C
=-100mA, V
CE
=-10V*
V
CE
=-20V, I
C
=-10mA,
f=50MHz
V
CB
=-20V, f=1MHz
V
CE
=-100V, I
C
=-50mA,
I
B1
=-5mA, I
B2
=10mA
f
T
C
obo
t
on
t
off
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
ZETEX [ ZETEX SEMICONDUCTORS ]
