SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
*
*
*
*
*
*
625mW POWER DISSIPATION
I
C
CONT 3A
12A Peak Pulse Current
Excellent H
FE
Characteristics Up To 12A (pulsed)
Extremely Low Saturation Voltage E.g. 8mV Typ.
Extremely Low Equivalent On Resistance;
R
CE(sat)
C
B
E
DEVICE TYPE
FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
COMPLEMENT
FMMT717
FMMT718
FMMT720
FMMT723
PARTMARKING
617
618
619
624
625
R
CE(sat)
50m
Ω
at 3A
50m
Ω
at 2A
75m
Ω
at 2A
-
-
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
FMMT FMMT FMMT FMMT FMMT
617
618
619
624
625
15
15
5
12
3
20
20
5
6
2.5
50
50
5
6
2
500
625
-55 to +150
125
125
5
3
1
150
150
5
3
1
UNIT
V
V
V
A
A
mA
mW
°C
Operating and Storage Temperature T
j
:T
stg
Range
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
3 - 149
ZETEX [ ZETEX SEMICONDUCTORS ]
