“SuperSOT”
SOT23 NPN SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 – APRIL 97
FEATURES
* 625mW POWER DISSIPATION
* Highest current capability SOT23 Darlington
* Very high hFE - specified at 2A (5K minimum)
- typically 600 at 5A
COMPLEMENTARY TYPE – FMMT734
PARTMARKING DETAIL – 634
FMMT634
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
120
100
12
5
900
625
-55 to +150
UNIT
V
V
V
A
mA
mW
°C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%.
ZETEX [ ZETEX SEMICONDUCTORS ]
