SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
*
*
*
*
*
*
625mW POWER DISSIPATION
C
B
E
I
C
CONT 2.5A
I
C
Up To 10A Peak Pulse Current
Excellent h
fe
Characteristics Up To 10A (pulsed)
Extremely Low Saturation Voltage E.g. 10mV Typ.
Exhibits extremely low equivalent on-resistance;
R
CE(sat)
DEVICE TYPE
FMMT717
FMMT718
FMMT720
FMMT722
FMMT723
COMPLEMENT
FMMT617
FMMT618
FMMT619
FMMT624
PARTMARKING
717
718
720
722
723
R
CE(sat)
72m
Ω
at 2.5A
97m
Ω
at 1.5A
163m
Ω
at 1.5A
-
-
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
Operating and Storage
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
FMMT
717
-12
-12
-5
-10
-2.5
FMMT
718
-20
-20
-5
-6
-1.5
FMMT
720
-40
-40
-5
-4
-1.5
-500
625
-55 to +150
FMMT
722
-70
-70
-5
-3
-1.5
FMMT
723
-100
-100
-5
-2.5
-1
UNIT
V
V
V
A
A
mA
mW
°C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
3 - 159
ZETEX [ ZETEX SEMICONDUCTORS ]
