SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 1 - AUGUST 1997
FEATURES
*
*
*
*
*
*
V
CEO
= 10V
5 Amp Continuous Current
20 Amp Pulse Current
Low Saturation Voltage
High Gain
Extremely Low Equivalent On-resistance;
R
CE(sat)
= 44mΩ at 5A
FZT1047A
C
E
C
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
35
10
5
20
5
500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C