SOT223 NPN SILICON PLANAR
MEDIUM POWER HIGH GAIN TRANSISTOR
ISSUE 2 - MARCH 2001
FEATURES
*
*
*
*
*
*
V
CEO
= 75V
4.5 Amp Continuous Current
10 Amp Pulse Current
Low Saturation Voltage
High Gain
Extremely Low Equivalent On-resistance;
R
CE(sat)
= 78mΩ at 4.5A
FZT1053A
C
E
C
B
SOT223
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C †
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
150
75
7.5
10
4.5
500
2.5
-55 to +150
UNIT
V
V
V
A
A
mA
W
°C
† The power which can be dissipated assuming the device is mounted in typical manner on a PCB
with copper equal to 2 inches x 2 inches.
ZETEX [ ZETEX SEMICONDUCTORS ]
