PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 - JANUARY 1997
FEATURES
* V
CEO
= -25V
* 4 Amp Continuous Current
* 10 Amp Pulse Current
* Low Saturation voltage
* High Gain
FZT1149A
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C †
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
-30
-25
-5
-10
-4
-500
2.5
-55 to +150
SOT223
UNIT
V
V
V
A
A
mA
W
°C
† The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 2 inches x 2 inches
ZETEX [ ZETEX SEMICONDUCTORS ]
