SOT223 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 40 Volt V
CEO
* Fast switching
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT2907A
FZT2222A
FZT2222A
C
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
VALUE
75
40
5
600
2
-55 to+150
UNIT
V
V
V
10
10
10
10
0.3
1.0
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=10
µ
A, I
E
=0
I
C
=10mA, I
B
=0 *
I
E
=10
µ
A, I
C
=0
V
CB
=50V, I
E
=0
V
CB
=50V, I
E
=0, T
amb
=150°C
V
EB
=3V, I
C
=0
V
CE
=60V, V
EB(off)
=3V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V *
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V,T
amb
=-55°C*
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
UNIT
V
V
V
mA
W
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CEX
V
CE(sat)
V
BE(sat)
h
FE
0.6
35
50
75
35
100
50
40
75
40
6
VALUE
MIN.
MAX.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
µ
A
1.2
2.0
300
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 296
ZETEX [ ZETEX SEMICONDUCTORS ]
