SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTOR
ISSUE 3 FEBRUARY 1997
FEATURES
* 2A continuous current
* 140 VOLT V
CEO
* Guaranteed h
FE
Specified up to 1A
PART MARKING DETAIL
FZT600
C
FZT600
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
160
140
10
4
2
2
-55 to +150
UNIT
V
V
V
0.01
10
10
0.1
1.1
1.2
1.9
1.7
100k
10k
20k
10k
250
10
0.75
2.20
100k
MHz
15
MHz
µ
s
µ
s
µ
A
µ
A
µ
A
µ
A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
MIN.
160
140
10
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
TYP.
MAX.
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=140V
V
CB
=140V, T
amb
=100°C
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward
Current Transfer
Ratio
GROUP B
Transition Frequency
Output Capacitance
Switching Times
0.75
0.85
1.7
1.5
1k
2k
1k
5k
10k
5k
150
V
V
V
V
f
T
C
obo
T
on
T
off
V
CES
=140V
V
EB
=8V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=5V*
I
C
=50mA, V
CE
=10V*
I
C
=0.5A, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=0.5mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=100mA, V
CE
=10V
f=20MHz
V
CB
=10V, f=1MHz
I
C
=0.5A, V
CE
=10V
I
B1
=I
B2
=0.5mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 197
ZETEX [ ZETEX SEMICONDUCTORS ]
