SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - OCTOBER 1995
FEATURES
* 400 Volt V
CEO
* Low saturation voltage
FZT658
C
E
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT758
FZT658
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltage
SYMBOL MIN.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
50
50
40
50
10
130
3300
MHz
pF
ns
ns
400
400
5
100
100
0.3
0.25
0.5
0.9
1.0
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
nA
nA
V
V
V
V
V
VALUE
400
400
5
1
0.5
2
-55 to +150
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=320V
V
EB
=4V
I
C
=20mA, I
B
=1mA*
I
C
=50mA, I
B
=5mA*
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA*
I
C
=100mA, V
CE
=5V*
I
C
=1mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
I
C
=100mA, V
CC
=100V
I
B1
=10mA, I
B2
=-20mA
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 215
ZETEX [ ZETEX SEMICONDUCTORS ]
