SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* High V
CEO
/ Very Low Saturation Voltage
* Gain of 400 at I
C
=200mA
APPLICATIONS
* Darlington replacement
* Relay / solenoid driver
PARTMARKING DETAIL -
FZT694B
FZT694B
C
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
120
120
5
2
1
2
-55 to +150
MAX.
UNIT
V
V
V
0.1
0.1
0.25
0.5
0.9
0.9
µ
A
µ
A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltages
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
ibo
C
obo
t
on
t
off
500
400
150
130
200
9
80
2900
MHz
pF
pF
ns
ns
MIN.
120
120
5
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
TYP.
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=100V
V
EB
=4V
I
C
=100mA, I
B
=0.5mA*
I
C
=400mA, I
B
=5mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=2V*
I
C
=100mA, V
CE
=2V
*
I
C
=200mA, V
CE
=2V*
I
C
=400mA, V
CE
=2V*
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=100mA, I
B!
=10mA
I
B2
=10mA, V
CC
=50V
V
V
V
V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 225
ZETEX [ ZETEX SEMICONDUCTORS ]
