SOT223 PNP SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FEATURES
* 60 Volt V
CEO
* 3 Amp continuous current
* Low saturation voltage
COMPLEMENTARY TYPE
PARTMARKING DETAIL
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
SYMBOL MIN.
V
(BR)CBO
-80
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
70
100
80
40
100
-0.15
-0.45
-0.9
-0.8
200
200
170
150
140
40
450
30
-60
-5
-0.1
-10
-0.1
0.3
0.6
-1.25
-1.0
300
MHz
ns
ns
pF
TYP.
FZT651
FZT751
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
µ
A
µ
A
µ
A
FZT751
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
VALUE
-80
-60
-5
-6
-3
2
-55 to +150
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=100
µ
A
V
CB
=-60V
V
CB
=-60V,
T =100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
I
C
=-1A, I
B
=-100mA*
amb
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Switching Times
Output Capacitance
V
V
V
V
I
C
=-1A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-100mA, V
CE
=-5V
f=100MHz
I
C
=-500mA, V
CC
=-10V
I
B1
=I
B2
=-50mA
V
CB
=-10V, f=1MHz
f
T
t
on
t
off
C
obo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 234
ZETEX [ ZETEX SEMICONDUCTORS ]
