SOT223 NPN SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTOR
ISSUE 3 - JANUARY 1996
FEATURES
* Extremely low equivalent on-resistance;
R
CE(sat)
36mΩ at 5A
*
7 Amp
continuous collector current (20 Amp peak)
* Very low saturation voltages
* Excellent gain charateristics specified upto 20 Amp
*
P
tot
=3 Watts
PARTMARKING DETAILS -
COMPLEMENTARY TYPE -
FZT849
FZT949
FZT849
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
80
30
6
20
7
3
-55 to +150
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 inch square minimum
3 - 257
ZETEX [ ZETEX SEMICONDUCTORS ]
