SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000
FEATURES
* 5 Amps continuous current , up to 15 Amps peak current
* Very low saturation voltages
* Excellent gain characteristics specified up to 10 Amps
*
P
tot
= 3 watts
* FZT951 exhibts extremely low equivalent on resistance;
R
CE(sat)
55m at 4A
COMPLEMENTARY TYPES - FZT951 = FZT851
FZT953 = FZT853
PARTMARKING DETAILS -
DEVICE TYPE IN FULL
FZT951
FZT953
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-15
-5
3
-55 to +150
FZT951
-100
-60
-6
-10
FZT953
-140
-100
UNIT
V
V
V
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
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