SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - JANUARY 1996
FEATURES
* 1 Amp continuous current
* Up to 2 Amps peak current
* Very low saturation voltage
* Excellent gain characteristics specified up to 1 Amp
COMPLEMENTARY TYPES -
PARTMARKING DETAILS -
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
FZT957 - FZT857
FZT958 - N/A
DEVICE TYPE IN FULL
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-2
-1
3
-55 to +150
FZT957
-300
-300
-6
FZT957
FZT958
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
FZT958
-400
-400
UNIT
V
V
V
-1.5
-0.5
A
A
W
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
3 - 289
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