SOT223 PNP SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 5– MARCH 2001
✪
FZTA64
4
PARTMARKING DETAILS:
COMPLIMENTARY TYPE:
FZTA64
FZTA14
2
1
SOT223
3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Peak Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
BM
P
tot
T
j
:T
stg
VALUE
-30
-30
-10
-800
-500
-200
2
-55 to +150
UNIT
V
V
V
mA
mA
mA
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
10K
20K
125
MHz
MIN.
-30
-30
-10
-100
-100
-1.5
-2.0
MAX.
UNIT
V
V
V
nA
nA
V
V
CONDITIONS.
I
C
=-10
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-10
µ
A, I
C
=0
V
CB
=-30V, I
E
=0
V
EB
=-10V, I
C
=0
I
C
=-100mA, I
B
=-0.1mA*
I
C
=-100mA, I
B
=-0.1mA*
IC=-10mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-50mA, V
CE
=-5V
f=20MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
TBA
ZETEX [ ZETEX SEMICONDUCTORS ]
