NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 FEB 94
FEATURES
* 80 Volt V
CEO
* Gain of 50 at I
C
=100mA
MPSA06
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
80
80
4
500
750
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
mW
°C
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
V
CE(sat)
V
BE(on)
50
50
100
MHz
MIN.
80
80
4
0.1
0.1
0.25
1.2
TYP.
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A, I
E
=0
I
C
=1mA, I
B
=0*
I
E
=100
µ
A, I
C
=0
V
CB
=80V, I
E
=0
V
CE
=60V
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=1V*
I
C
=10mA, V
CE
=1V*
I
C
=100mA, V
CE
=1V*
I
C
=10mA, V
CE
=2V
f=100MHz
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
f
T
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-76
ZETEX [ ZETEX SEMICONDUCTORS ]
