N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – FEB 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=5Ω
VN10LP
D
G
S
REFER TO ZVN3306A FOR GRAPHS
E-Line
TO92 Compatible
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
270
3
±
20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
= 25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate Body Leakage
Zero Gate Voltage
Drain Current (1)
On State Drain
Current(1)
Static Drain Source On
State Resistance (1)
Forward
Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
100
750
5.0
7.5
MIN.
60
0.8
2.5
100
10
TYP.
MAX.
UNIT
V
V
nA
µA
mA
Ω
Ω
mS
CONDITIONS.
I
D
=100µA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60 V, V
GS
=0V
V
DS
=15 V, V
GS
=10V
V
GS
=10V,I
D
=500mA
V
GS
=5V, I
D
=200mA
V
DS
=15V,I
D
=500mA
C
iss
C
oss
C
rss
t
(on)
t
(off)
60
25
5
10
10
pF
pF
pF
ns
ns
V
DD
≈15V,
I
D
=600mA
V
DS
=25 V, V
GS
=0V
f=1MHz
3-90