欢迎访问ic37.com |
会员登录 免费注册
发布采购

VN10LP 参数 Datasheet PDF下载

VN10LP图片预览
型号: VN10LP
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型垂直DMOS FET [N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET]
分类和应用:
文件页数/大小: 1 页 / 26 K
品牌: ZETEX [ ZETEX SEMICONDUCTORS ]
   
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 1 – FEB 94
FEATURES
* 60 Volt V
DS
* R
DS(on)
=5Ω
VN10LP
D
G
S
REFER TO ZVN3306A FOR GRAPHS
E-Line
TO92 Compatible
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
270
3
±
20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
= 25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
= 25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate Body Leakage
Zero Gate Voltage
Drain Current (1)
On State Drain
Current(1)
Static Drain Source On
State Resistance (1)
Forward
Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
100
750
5.0
7.5
MIN.
60
0.8
2.5
100
10
TYP.
MAX.
UNIT
V
V
nA
µA
mA
mS
CONDITIONS.
I
D
=100µA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60 V, V
GS
=0V
V
DS
=15 V, V
GS
=10V
V
GS
=10V,I
D
=500mA
V
GS
=5V, I
D
=200mA
V
DS
=15V,I
D
=500mA
C
iss
C
oss
C
rss
t
(on)
t
(off)
60
25
5
10
10
pF
pF
pF
ns
ns
V
DD
≈15V,
I
D
=600mA
V
DS
=25 V, V
GS
=0V
f=1MHz
3-90