ZDT1048
SM-8 Dual NPN medium power high gain transistors
Summary
BV
CEO
> 17.5V
I
C(cont)
= 5A
V
CE(sat)
< 75mV @ 1A
P
D
= 2.75W
Description
Advanced process capability has been used to achieve
this high performance device. Combining two NPN
transistors in the SM-8 package provides a compact
solution for the intended applications.
C1
C2
B1
B2
Features
•
•
•
•
Dual NPN device
Very low saturation voltage
High gain
SM 8 package
E1
E2
Applications
•
•
CCFL invertors
Royer circuits
Ordering information
DEVICE
ZDT1048TA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
Device marking
T1048
Issue 2 - December 2007
© Zetex Semiconductors plc 2007
1
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