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ZNBG3113Q20 参数 Datasheet PDF下载

ZNBG3113Q20图片预览
型号: ZNBG3113Q20
PDF下载: 下载PDF文件 查看货源
内容描述: 与偏振开关与音调检测FET偏置控制器 [FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION]
分类和应用: 模拟IC开关信号电路光电二极管控制器
文件页数/大小: 17 页 / 687 K
品牌: ZETEX [ ZETEX SEMICONDUCTORS ]
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ZNBG3113  
ZNBG3114  
APPLICATIONS CIRCUIT  
APPLICATIONS INFORMATION  
The above is a partial application circuit for the ZNBG series showing all external components  
required for appropriate biasing. The bias circuits are unconditionally stable over the full  
temperature range with the associated FETs and gate and drain capacitors in circuit.  
Capacitors CD and CG ensure that residual power supply and substrate generator noise is not  
allowed to affect other external circuits which may be sensitive to RF interference. They also  
serve to suppress any potential RF feedthrough between stages via the ZNBG device. These  
capacitors are required for all stages used. Values of 10nF and 4.7nF respectively are  
recommended however this is design dependent and any value between 1nF and 100nF could  
be used.  
The capacitors CNB and CSUB are an integral part of the ZNBGs negative supply generator. The  
negative bias voltage is generated on-chip using an internal oscillator. The required value of  
capacitors CNB and CSUB is 47nF. This generator produces a low current supply of approximately  
-3 volts. Although this generator is intended purely to bias the external FETs, it can be used to  
power other external circuits via the CSUB pin.  
Resistor RCAL sets the drain current at which all external FETs are operated. If any bias control  
circuit is not required, its related drain and gate connections may be left open circuit without  
affecting the operation of the remaining bias circuits.  
The ZNBG devices have been designed to protect the external FETs from adverse operating  
conditions. With a JFET connected to any bias circuit, the gate output voltage of the bias circuit  
can not exceed the range -3.5V to 1V under any conditions, including powerup and powerdown  
transients. Should the negative bias generator be shorted or overloaded so that the drain current  
of the external FETs can no longer be controlled, the drain supply to FETs is shut down to avoid  
damage to the FETs by excessive drain current.  
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