PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 1 Watt
ZTX550
ZTX551
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-60
-45
-5
-2
-1
E-Line
TO92 Compatible
ZTX550 ZTX551
-80
-60
UNIT
V
V
V
A
A
W
mW/ °C
°C
1
5.7
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
100
15
150
ZTX550
MIN.
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
Transition
Frequency
-60
-45
-5
-0.1
-0.1
-0.25
-1.1
300
50
10
150
MAX. MIN.
-80
-60
-5
ZTX551
MAX.
UNIT
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-45V
V
CB
=-60V
V
EB
=-4V
I
C
=-150mA,
I
B
=-15mA*
I
C
=-150mA,
I
B
=-15mA*
I
C
=-150mA,
V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
-0.1
-0.1
-0.35
-1.1
150
µ
A
µ
A
µ
A
V
V
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
3-194