ZTX602
ZTX603
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX602
MIN.
Static Forward
Current Transfer
Ratio
h
FE
2K
5K
2K
0.5K
150
ZTX603
MAX.
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
MHz
pF
pF
µ
s
µ
s
UNIT
CONDITIONS.
MAX. MIN.
2K
5K
2K
0.5K
150
90 Typical
15 Typical
0.5 Typical
1.1 Typical
100K
100K
Transition Frequency f
T
Input Capacitance
Output Capacitance
Switching Times
C
ibo
C
obo
t
on
t
off
I
C
=100mA, V
CE
=10V
f=20MHz
V
EB
=500mV, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA, V
CE
=10V
I
B1
=I
B2
=0.5mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Maximum Power Dissipation (W)
1.0
R
5
= 200KΩ
R
5
= 50KΩ
R
5
= 10KΩ
R
5
= 1MΩ
R
5
=
∞
0.8
0.6
0.4
0.2
0
1
10
100
200
DC Conditions
ZTX602
ZTX603
V
CE
- Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using
the following equation
T
amb
(
max
)
=
Power
(max ) −
Power
(
act)
+25°
C
0.0057
T
amb(max)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
3-210
ZETEX [ ZETEX SEMICONDUCTORS ]
