NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 100 Volt V
CEO
* 800 mA continuous current
* Gain of 10K at I
C
=500mA
* P
tot
=1 Watt
ZTX614
C
B
E
REFER TO BCX38 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
120
100
10
800
1.0
5.7
E-line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
W
mW/ °C
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
MIN.
120
100
10
100
100
1.25
1.8
5000
10000
TYP.
MAX.
UNIT
V
V
V
nA
nA
V
V
CONDITIONS.
I
C
=10
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=8V, I
C
=0
I
C
=800mA, I
B
=8mA*
IC=800mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
CE(sat)
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
≤
2%
3-215
ZETEX [ ZETEX SEMICONDUCTORS ]
