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ZTX750 参数 Datasheet PDF下载

ZTX750图片预览
型号: ZTX750
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅平面中功率晶体管 [PNP SILICON PLANAR MEDIUM POWER TRANSISTORS]
分类和应用: 晶体晶体管局域网
文件页数/大小: 3 页 / 64 K
品牌: ZETEX [ ZETEX SEMICONDUCTORS ]
 浏览型号ZTX750的Datasheet PDF文件第2页浏览型号ZTX750的Datasheet PDF文件第3页  
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 – JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
= 1 Watt
ZTX750
ZTX751
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation: at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
ZTX750
MIN. TYP.
-60
-45
-5
-0.1
-10
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX751
MAX. MIN. TYP.
-80
-60
-5
MAX.
ZTX750
-60
-45
-5
-6
-2
1
5.7
E-Line
TO92 Compatible
ZTX751
-80
-60
UNIT
V
V
V
A
A
W
mW/°C
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
UNIT CONDITIONS.
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=-100
µ
A
I
C
=-10mA
I
E
=-100
µ
A
V
CB
=-45V
V
CB
=-60V
V
CB
=-45V,
T
amb
=100°C
V
CB
=-60V,
T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA
I
C
=-2A, I
B
=-200mA
I
C
=-1A, I
B
=-100mA
-0.1
-10
-0.1
-0.15 -0.3
-0.28 -0.5
-0.9
Emitter Cut-Off
Current
I
EBO
-0.1
-0.15 -0.3
-0.28 -0.5
-0.9
-1.25
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
V
V
-1.25 V
3-257