PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
* 100 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
* P
tot
=1 Watt
ZTX752
ZTX753
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
at T
amb
=25°C
derate above 25°C
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ZTX752
-100
-80
-5
-6
-2
1
5.7
E-Line
TO92 Compatible
ZTX753
-120
-100
UNIT
V
V
V
A
A
W
mW/°C
°C
Operating and Storage Temperature Range
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
ZTX752
ZTX753
SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
-100
-80
-5
-0.1
-10
I
EBO
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
-1.25
-1
-120
-100
-5
V
V
V
µ
A
µ
A
µ
A
µ
A
µ
A
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-80V
V
CB
=-100V
V
CB
=-80V,
T
amb
=100°C
V
CB
=-100V,
T
amb
=100°C
V
EB
=-4V
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-1A, I
B
=-100mA*
IC=-1A, V
CE
=-2V*
-0.1
-10
-0.1
-0.17 -0.3
-0.30 -0.5
-0.9
-0.8
Emitter Cut-Off
Current
Collector-Emitter
V
CE(sat)
Saturation Voltage
Base-Emitter
V
BE(sat)
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
BE(on)
V
V
-1.25 V
-1
V
3-260
ZETEX [ ZETEX SEMICONDUCTORS ]
