PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
=1 Watt
ZTX758
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-400
-400
-5
-1
-500
1
5.7
-55 to +200
UNIT
V
V
V
A
mA
W
mW/ °C
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
V
(BR)CBO
V
CEO(SUS)
V
(BR)EBO
I
CBO
I
CES
MIN.
TYP.
MAX.
UNIT
V
V
V
-100
-100
-100
-0.30
-0.25
-0.50
-0.9
-0.9
50
50
40
3-267
nA
nA
nA
V
V
V
V
V
CONDITIONS.
I
C
=-100
µ
A
I
C
=-10mA*
I
E
=-100
µ
A
V
CB
=-320V
V
CE
=-320V
V
EB
=-4V
I
C
=-20mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, I
B
=-10mA*
IC=-100mA, V
CE
=-5V*
I
C
=-1mA, V
CE
=-5V
I
C
=-100mA, V
CE
=-5V*
I
C
=-200mA, V
CE
=-10V*
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
-400
-400
-5
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
ZETEX [ ZETEX SEMICONDUCTORS ]
