ZTX788A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
Transition Frequency
Output Capacitance
Switching Times
SYMBOL
f
T
C
obo
t
on
t
off
MIN.
100
TYP.
150
30
40
500
60
MAX.
UNIT
MHz
pF
ns
ns
CONDITIONS.
I
C
=-50mA, V
CE
=-5V
f=50MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
SYMBOL
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
MAX.
175
116
70
UNIT
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
200
Max Power Dissipation - (Watts)
Thermal Resistance (°C/W)
D=1 (D.C.)
2.0
t
1
D=t
1
/t
P
t
P
C
1.5
as
e
te
m
pe
1.0
Am
ra
100
D=0.5
bie
tu
nt t
re
em
0.5
0
per
at u
re
D=0.2
D=0.1
Single Pulse
-40 -20
0
20 40
60 80 100 120 140 160 180 200
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-272
ZETEX [ ZETEX SEMICONDUCTORS ]
