Super323™
SOT323 NPN SILICON POWER
(SWITCHING) TRANSISTOR
ISSUE 1 - SEPTEMBER 1998
FEATURES
ZUMT617
*
*
*
*
*
500mW POWER DISSIPATION
I
C
CONT 1.5A
5A Peak Pulse Current
Excellent H
FE
Characteristics Up To 5A (pulsed)
Extremely Low Equivalent On Resistance;
R
CE(sat)
APPLICATIONS
*
DC-DC converter boost functions
*
Motor drive functions
DEVICE TYPE
ZUMT617
COMPLEMENT
ZUMT717
PARTMARKING
T61
R
CE(sat)
135mΩ at 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
VALUE
15
15
5
5
1.5
200
385 †
500 ‡
-55 to +150
UNIT
V
V
V
A
A
mA
mW
Operating and Storage Temperature T
j
:T
stg
Range
°C
† Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
‡ Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZETEX [ ZETEX SEMICONDUCTORS ]
