SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – NOVEMBER 1995
FEATURES
* 60 Volt V
DS
* R
DS(on)
=2Ω
ZVN2106G
D
S
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ZVP2106G
ZVN2106
G
D
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
710
8
±
20
2.0
-55 to +150
UNIT
V
mA
A
V
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
SYMBOL MIN. MAX. UNIT CONDITIONS.
BV
DSS
V
GS(th)
I
GSS
I
DSS
60
0.8
2.4
20
500
100
2
2
300
75
45
20
7
8
12
15
V
V
nA
nA
µA
A
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈18V,
I
D
=1A
V
DS
=18 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=60 V, V
GS
=0
V
DS
=48 V, V
GS
=0V,
T=125°C
(2)
V
DS
=18V, V
GS
=10V
V
GS
=10V,I
D
=1A
V
DS
=18V,I
D
=1A
On-State Drain Current (1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
ReverseTransfer Capacitance(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 385
ZETEX [ ZETEX SEMICONDUCTORS ]
