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ZVN2110A 参数 Datasheet PDF下载

ZVN2110A图片预览
型号: ZVN2110A
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型垂直DMOS FET [N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET]
分类和应用: 晶体小信号场效应晶体管开关
文件页数/大小: 3 页 / 91 K
品牌: ZETEX [ ZETEX SEMICONDUCTORS ]
 浏览型号ZVN2110A的Datasheet PDF文件第2页浏览型号ZVN2110A的Datasheet PDF文件第3页  
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 4Ω
ZVN2110A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
320
6
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
250
75
25
8
7
8
13
13
1.5
4
100
0.8
2.4
20
1
100
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
A
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=1A
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=1A
V
DS
=25V,I
D
=1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
3
)
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator