SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995
7
FEATURES
* 6A PULSE DRAIN CURRENT
* FAST SWITCHING SPEED
ZVN2110G
D
S
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
ZVN2110
ZVP2110G
D
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
500
6
±
20
2
-55 to +150
UNIT
V
mA
A
V
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
250
1.5
MIN. TYP. MAX. UNIT
100
0.8
2.4
V
V
nA
µA
µA
A
4
Ω
mS
75
25
8
7
8
13
13
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=1A
V
DS
=25 V, V
GS
=0V, f=1MHz
CONDITIONS.
I
D
=1mA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V, I
D
=1A
V
DS
=25V, I
D
=1A
0.1
20
1
100
2
350
59
16
4
4
4
8
8
DRAIN-SOURCE DIODE CHARACTERISTICS
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT
0.82
112
CONDITIONS.
Diode Forward Voltage (1)
Reverse Recovery Time
V
SD
T
RR
V
ns
I
S
=0.32A, V
GS
=0
I
F
=0.32A, V
GS
=0, I
R
=0.1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
3 - 387
ZETEX [ ZETEX SEMICONDUCTORS ]
