ZXM62P03G
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
19.9
13
-0.95
V
ns
nC
T
J
=25 C, I
S
=-1.6A,
V
GS
=0V
T
J
=25 C, I
F
=-1.6A,
di/dt= 100A/ s
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.8
6.4
13.9
10.3
10.2
1.5
3
ns
ns
ns
ns
nC
nC
nC
V
DS
=-24V,V
GS
=-10V,
I
D
=-1.6A
V
DD
=-15V, I
D
=-1.6A
R
G
=6.2
,
V
GS
=-10V
C
iss
C
oss
C
rss
330
120
45
pF
pF
pF
V
DS
=-25V, V
GS
=0V,
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
1.1
-1.0
0.15
0.23
S
-30
-1
100
V
A
nA
V
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
V
GS
=-10V, I
D
=-1.6A
V
GS
=-4.5V, I
D
=-0.8A
V
DS
=-10V,I
D
=-0.8A
NOTES
(1) Measured under pulsed conditions. Width 300µ s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - DECEMBER 2002
4
ZETEX [ ZETEX SEMICONDUCTORS ]
