ZXMN10A08G
100V SOT223 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
100
R
DS(on)
( )
0.250 @ V
GS
= 10V
0.300 @ V
GS
= 6V
I
D
(A)
2.9
2.6
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
D
G
S
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
SOT223 package
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
D
G
Pinout - top view
Tape width
(mm)
12
Quantity
per reel
1,000
Ordering information
Device
ZXMN10A08GTA
Reel size
(inches)
7
Device marking
ZXMN
10A08
© Zetex Semiconductors plc 2006