ZXMN10A25G
100V SOT223 N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
100
R
DS(on)
( )
0.125 @ V
GS
= 10V
0.150 @ V
GS
= 6V
I
D
(A)
4
3.7
Description
This new generation trench MOSFET from Zetex features a unique
structure which combininthe benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
•
•
•
•
Low on-resistance
Fast switching speed
Low gate drive
SOT223 package
D
G
S
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
D
G
Ordering information
Device
ZXMN10A25GTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1,000
Pinout - top view
Device marking
ZXMN
10A25
© Zetex Semiconductors plc 2006
ZETEX [ ZETEX SEMICONDUCTORS ]
