ZXMN3F31DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
30
R
DS(on)
(Ω)
0.024 @ V
GS
= 10V
0.039 @ V
GS
= 4.5V
I
D
(A)
7.3
5.7
Description
This new generation Trench MOSFET from Zetex features low on-
resistance achievable with 4.5V gate drive.
Features
•
•
Low on-resistance
4.5V gate drive capability
D1
D2
Applications
•
•
•
•
•
DC-DC Converters
Power management functions
Load switching
Motor control
Back lighting
G1
S1
G2
S2
S1
G1
S2
Tape width
(mm)
12
Quantity
per reel
500
D1
D1
D2
D2
Ordering information
DEVICE
ZXMN3F31DN8TA
Reel size
(inches)
7
G2
Device marking
ZXMN
3F31D
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com