ZXMN6A09DN8
TYPICAL CHARACTERISTICS
T = 25˚ C
T = 150˚ C
4V
3.5V
5V
5V
4V
3.5V
3V
I
D
Drain Current (A)
1
I
D
Drain Current (A)
10
10
3V
V
GS
1
2.5V
0.1
2.5V
0.1
2V
V
GS
0.01
0.1
1
10
0.01
0.1
1
10
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
Normalised R
DS(on)
and V
GS(th)
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
I
D
Drain Current (A)
T = 150˚ C
V
GS
= 10V
I
D
= 12A
R
DS(on)
1
T = 25˚ C
V
GS(th)
V
GS
= V
DS
I
D
= 250uA
0.1
2
3
4
V
DS
= 10V
5
50
100
150
V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (˚ C)
R
DS(on)
Drain-Source On-Resistance
I
SD
Reverse Drain Current (A)
1
3V
3.5V
4V
10
V
GS
T = 150˚ C
1
0.1
5V
10V
T = 25˚ C
T = 25˚ C
0.1
1
10
I
D
Drain Current (A)
0.4
0.6
0.8
1.0
V
SD
Source-Drain Voltage (V)
1.2
PROVISIONAL ISSUE D - AUGUST 2001
5
ZETEX [ ZETEX SEMICONDUCTORS ]
