ZXMP3A16DN8
CHARACTERISTICS
Max Power Dissipation (W)
-I
D
Drain Current (A)
R
DS(on)
10
Limited
1
DC
1s
100ms
Single Pulse
T
amb
=25°C
One active die
10ms
1ms
100µs
100m
10m
100m
-V
DS
Drain-Source Voltage (V)
1
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Two active die
One active die
20
40
60
80 100 120 140 160
Temperature (°C)
Safe Operating Area
110
T
amb
=25°C
100
One active die
90
80
70
60
D=0.5
50
40
Single Pulse
30
D=0.2
20
D=0.05
10
D=0.1
0
100µ 1m 10m 100m 1
10 100 1k
Derating Curve
Single Pulse
T
amb
=25°C
One active die
Thermal Resistance (°C/W)
MaximumPower (W)
100
10
1
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE C - JULY 2004
3
ZETEX [ ZETEX SEMICONDUCTORS ]
